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All igbt saturation voltage wholesalers & igbt saturation voltage manufacturers come from members. We doesn't provide igbt saturation voltage products or service, please contact them directly and verify their companies info carefully.
Total 4723 products from igbt saturation voltage Manufactures & Suppliers |
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Brand Name:Lingxun Place of Origin:China Servo Drive High Power IGBT Low Collector To Emitter Saturation Voltage Product Description: This IGBT product is perfect for home appliances, motor drives, fan, pumps, vacuum cleaner, general inverter PFC applications, uninterruptible power supplies, ... |
Guangdong Lingxun Microelectronics Co., Ltd
Guangdong |
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Brand Name:FUJI Model Number:2MBI100N-060 Place of Origin:JAPAN ...IGBT Power Module 2-PACK IGBT 600V 100A IGBT MODULE ( N series ) n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function ( ~3 Times Rated Current) n n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply Description 1. IGBT... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Brand Name:Fuji Electric Model Number:2MBI75N-060 Place of Origin:JP 2MBI75N-060 IGBT POWER DIODE MODULE 600V 75A IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting ... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Brand Name:UTC-IC Model Number:2SB1151-Y Place of Origin:Original ...SATURATION VOLTAGE LARGE CURRENT high power mosfet transistors FEATURES *High Power Dissipation : PD=1.5W(Ta=25℃) *Complementary to 2SD1691. ABSOLUTE MAXIMUM RATING (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:UTC-IC Model Number:2SB1151-Y Place of Origin:Original ...SATURATION VOLTAGE LARGE CURRENT high power mosfet transistors FEATURES *High Power Dissipation : PD=1.5W(Ta=25℃) *Complementary to 2SD1691. ABSOLUTE MAXIMUM RATING (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:REASUNOS Place of Origin:Guangdong, CN Product Description: High Power IGBT (Insulated Gate Bipolar Transistor) is a high power gate bipolar transistor with high current density, fast switching speed and high power capacity. It is designed to support applications with high frequency up to 60KHz... |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Brand Name:SANJOE Model Number:TIG315MA Place of Origin:CHINA ...Voltage Input DC Argon Arc IGBT TIG Welding Machine TIG315MA Features: 1, Using IGBT Single-tube inverter technology; 2, Wide-Voltage design; input volatge is 160v-560v 3, Full Bridge structure, good performance; 4, High frequency arcing, stable arc on welding; Parameters: TECHNICAL DATA UNIT TIG315MA Input Voltage... |
Foshan Sanqiao Welding Industry Co., Ltd.
Guangdong |
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Place of Origin:ShenZhen China Brand Name:Hua Xuan Yang Model Number:B772 SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low Speed switching Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous... |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Model Number:MMBD1503A jcet SOT 23 #detail_decorate_root .magic-0{vertical-align:top}#detail_decorate_root .magic-1{vertical-align:top;display:block;padding-right:4px;box-sizing:border-box;padding-left:4px}#detail_decorate_root .magic-2{vertical-align:top;padding-bottom:4px;box-sizing:... |
ShenZhen QingFengYuan Technology Co.,Ltd.
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Brand Name:Infineon Technologies Model Number:IRGP4660D-EPBF Place of Origin:original ... saturation voltage - High speed switching - High power cycling capability - Reverse voltage protection Specifications: - Maximum Collector-Emitter Voltage (VCES): 600V - Maximum Collector Current (IC): 100A - Maximum Gate-Emitter Voltage (VGE): ± 20V - |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Mitsubishi Electric Model Number:CM450DY-24S 205G Place of Origin:CHN ...42 IGBT Modules IGBT MODULES-SERIES DUAL Manufacturer: Mitsubishi Electric Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 1.8... |
Wisdtech Technology Co.,Limited
Guangdong |
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Brand Name:Mitsubishi Electric Model Number:CM600DX-24T Place of Origin:Japan ... IGBT MODULE IGBT MODULE T-SERIES NX TYPE DUAL Manufacturer: Mitsubishi Electric Product Category: IGBT Module Products: IGBT Silicon Modules Configuration: Dual Maximum collector-emitter voltage VCEO: 1.2 kV Collector-emitter saturation voltage: 1.... |
Eastern Stor International Ltd.
Guangdong |
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Brand Name:Infineon Technologies Model Number:FF300R12KE4 Place of Origin:Original Factory ...Igbt Module N-CH 1200V 460A IGBT Inverter IGBT Modules Applications Motor control and drives Uninterruptible Power Supplies (UPS) Specifications Product Attribute Attribute Value Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:Original Factory Model Number:BSM150GB120DN2 Place of Origin:CN ...IGBT Modules 1200V 150A Half-Bridge IGBT Power Module Product Description Of BSM150GB120DN2 BSM150GB120DN2 is 1200V, 210A Half Bridge IGBT Module, Chassis Mount Module. Specification Of BSM150GB120DN2 Part Number: BSM150GB120DN2 Product: IGBT Silicon Modules Configuration: Half Bridge Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:IXYS Model Number:IXBT14N300HV ... of MOSFETs and IGBTs. These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both its saturation voltage and the forward voltage drop of its intrinsic diode. The "Free" intrinsic body diodes of |
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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Brand Name:ON/Fairchild Model Number:G40N60UFD Place of Origin:Original Factory ...IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features : • High speed switching • Low saturation voltage... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Place of Origin:PHILIPPINE Brand Name:TOSHIBA Model Number:MG50J6EL1 ...IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]The electrodes are isolated from case. [1]High input impedance. [1]6 IGBTs built into 1 package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage... |
Mega Source Elec.Limited
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Brand Name:IXYS Model Number:IXGH48N60C3D1 .... This reliable NPT IGBT transistor offers several benefits, including: Pros: - Efficient power management: With a low collector-to-emitter saturation voltage, this transistor allows for more efficient power management in your electronic devices. - |
Yougou Electronics (Shenzhen) Co., Ltd.
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Brand Name:Infineon Model Number:AUIRG4PH50S Place of Origin:TAIWAN ...IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT 1.FEATURES Standard: Optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency • Industry standard TO-247AC package • Lead-Free • Automotive Qualified * 2.BENEFITS Generation 4 IGBT's offer highest efficiency available IGBT... |
Shenzhen Hongxinwei Technology Co., Ltd
Guangdong |
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Model Number:SKM400GB128D Brand Name:Original Place of Origin:US Product Detail Product Information Transistor Polarity: N Channel DC Collector Current: 520A Collector Emitter Saturation Voltage Vce(on):1.2kV Collector Emitter Voltage V(br)ceo:1.2kV Transistor Case Style:SEMITRANS 3 No. of Pins:7Pins Operating ... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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