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| Categories | Electronic Integrated Circuits |
|---|---|
| Brand Name: | Infineon |
| Model Number: | AUIRG4PH50S |
| Certification: | ROHS |
| Place of Origin: | TAIWAN |
| MOQ: | 10PCS |
| Price: | NEGOTIABLE |
| Payment Terms: | T/T, Western Union |
| Supply Ability: | 10000PCS/WEEK |
| Delivery Time: | 2-3DAYS |
| Packaging Details: | 400PCS/BOX TUBE |
| Product Category: | IGBT Transistors |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Configuration: | Single |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.47 V |
| Maximum Gate Emitter Voltage: | - 20 V, + 20 V |
| Continuous Collector Current at 25 C: | 141 A |
| Pd - Power Dissipation: | 543 W |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Height: | 20.7 mm |
| Length: | 15.87 mm |
| Width: | 5.31 mm |
| Factory packaging quantity: | 400PCS/BOX |
AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT
1.FEATURES
Standard: Optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
• Industry standard TO-247AC package
• Lead-Free
• Automotive Qualified *
2.BENEFITS
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
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