8inch GaN-on-Si Epitaxy Wafer 110 111 110 N Type P Type Customization Semiconductor RF LED

8inch GaN-on-Si Epitaxy Wafer 110 111 110 N-type P-type Customization Semiconductor RF LED

Description of GaN-on-Si Wafers:

The 8-inch-diameter GaN-on-Si MMIC and Si CMOS wafers (above, left) are 3D integrated at the wafer scale. The two wafers are bonded face-to-face using a low-temperature oxide-oxide bonding technique. The Si substrate of the silicon-on-insulator wafer is completely removed by grinding and selective wet etch to stop at the buried oxide (BOX). Vias to the back of CMOS and to the top of GaN circuits are etched separately and interconnected with a top metal. The vertical integration minimizes the chip size and reduces the interconnect distance to lower the loss and delay. In addition to the oxide-oxide bond approach, work is underway to expand the capabilities of the 3D integration approach by using hybrid bond interconnects, which would allow direct electrical connections between the two wafers without separate vias to the GaN and CMOS circuits.

The Character of GaN-on-Si Wafers:

High uniformity
Low leakage current
Higher operating temperatures
Excellent 2DEG characteristic
High breakdown voltage (600V-1200V)
Lower ON-resistance
Higher switching frequencies
Higher operating frequencies (up to 18GHz)

CMOS-compatible process for GaN-on-Si MMICs

Use of 200-mm-diameter Si substrate and CMOS tools reduces cost and increases yield

Wafer-scale 3D integration of GaN MMICs with CMOS to enhance functionalities with improved size, weight, and power benefits

The Form of GaN-on-Si Wafers:

The Physical Photo of GaN-on-Si Wafers:

Application of GaN-on-Si Wafers:

1. Lighting: GaN-on-Si substrates are used in the manufacturing of high-brightness light-emitting diodes (LEDs) for various applications such as general lighting, automotive lighting, backlighting for displays, and more. GaN LEDs are energy-efficient and long-lasting.
2. Power Electronics: GaN-on-Si substrates are utilized in the production of power electronic devices like high-electron-mobility transistors (HEMTs) and Schottky diodes. These devices are employed in power supplies, inverters, and converters due to their high efficiency and fast switching speeds.
3. Wireless Communication: GaN-on-Si substrates are used in the development of high-frequency and high-power RF devices for wireless communication systems like radar systems, satellite communication, and base stations. GaN RF devices offer high power density and efficiency.
4. Automotive: GaN-on-Si substrates are increasingly being used in the automotive industry for applications such as onboard chargers, DC-DC converters, and motor drives due to their high power density, efficiency, and reliability.
5. Solar Power: GaN-on-Si substrates can be employed in the production of solar cells, where their high efficiency and resistance to radiation damage can be advantageous for space applications and concentrated photovoltaics.
6. Sensors: GaN-on-Si substrates can be utilized in the development of sensors for various applications, including gas sensors, UV sensors, and pressure sensors, due to their high sensitivity and stability.
7. Biomedical: GaN-on-Si substrates have potential applications in biomedical devices for sensing, imaging, and therapy due to their biocompatibility, stability, and ability to operate in harsh environments.
8. Consumer Electronics: GaN-on-Si substrates are used in consumer electronics for various applications like wireless charging, power adapters, and high-frequency circuits due to their high efficiency and compact size.

Application Picture of GaN-on-Si Wafers:

FAQ:

1.Q:What is the process of GaN on silicon?
A: 3D stacking technology. Upon separation, the silicon donor wafer cleaves along a weakened crystal plane and thereby leaves a thin layer of silicon channel material on the GaN wafer. This silicon channel is then processed into silicon PMOS transistors on the GaN wafer.

2.Q:What are the advantages of gallium nitride over silicon?
A:Gallium nitride (GaN) is a very hard, mechanically stable, binary III/V direct bandgap semiconductor. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.

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