980 Nm Packaged PIN High Power Pulsed Laser Diode Single Emitter TO Can

980 nm Packaged Laser Diode , ms pulse TO Package Single Emitter Diode Laser

LDMP-0980-005W-*4 series packaged single emitters are Fabry-Perot cavity semiconductor lasers based on Quantum-well epitaxy and ridge waveguide structure design. With 20 years' experience in laser diode design and production, HTOE packaged single emitters provide excellent reliability and performance.

A laser diode is electrically a PIN diode. The active region of the laser diode is in the intrinsic (I) region, and the carriers (electrons and holes) are pumped into that region from the N and P regions respectively. While initial diode laser research was conducted on simple P-N diodes, all modern lasers use the double-hetero-structure implementation, where the carriers and the photons are confined in order to maximize their chances for recombination and light generation.

Advantages

• 980nm Center wavelength
• 5.6mm in TO Package design
• Provide beam shaping services like fast-axis compression according to customer demands
• 20 years' experience in packaged laser diode design and production

Parameters(20℃)

Package Information

TOØ56 Package

Function Curve

P-I-V Curve

Notice

1. Item model notice: LDMP (Item model), 0980 (Center wavelength), 005W (Output power), *4 (Heat sink structure and item width).

2. Data in the sheet are all based on TOØ56 (socket, capless) package testing under 10ms 10Hz pulse condition.

3. Please store or use the LD under dry and air flow ambient.To avoid any situation of condensation which will damage the LD.

4. Working under high temperature will increase the threshold current and decrease the efficiency conversion,speed up the aging of the LD.

5. The exceed power output will speed up the aging of the LD.

6. Laser diode belongs to electrostatic sensitive components. Should deal with anti-electrostatic method. To touch the LD directly unless human-body is well connect with ground. Otherwise the LD will be burned easily. To wear anti-electrostatic wrist band is necessary.

7. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.

Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center.

• Established in 1999
• Registered Capital：227 million RMB
• Located in Shahe Industrial Park, Beijing
• Employees：~180
• Products: Semiconductor Lasers

Headquarter in Beijing：

• Over 3000m² of manufacturing space, and more than 1500m² clean room with class 1,000 and 10,000 ；
• The new factory planned with 11,000m², and under construction now.

R&D Platform

• National Optoelectronic Engineering Research Center
• Post-doctoral Research Center
• Engineering Technology Research Institute Optoelectronics Branch of China Energy Conservation Group

More than 30 core patents：

• Ep-Wafer Structure Design
• COMD control
• Electrode process
• Chip process
• Chip packaging
• Beam shaping
• Fiber coupling

Leading provider of laser diodes and laser-based solutions in China.