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Semiconductor TO Can Laser Diode High Reliablity With Beam Shaping Ball Lens

Categories TO Can Laser Diode
Brand Name: HTOE
Model Number: LDM-0808-200m-*0
Place of Origin: Beijing, China
MOQ: 200 pcs
Price: Negotiable
Payment Terms: T/T
Supply Ability: 1000 pcs per month
Delivery Time: 10-20 working days
Packaging Details: Paper Box
Output power: 200m Watt
Lasing Wavelength: 808±4 nm
Operating Current: ≤0.22 A
Operating Voltage: ≤2.00 V
Package: TOØ56 with ball lens
Operating Temperature: 10 ~ 50 ℃
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Semiconductor TO Can Laser Diode High Reliablity With Beam Shaping Ball Lens

808nm , 200mW output power, TO-56 Packaged Laser Diode with Beam Shaping Ball Lens

HTOE LDM-0808-200m-*0 is a highly efficient semiconductor laser diode which provides emission wavelength of 808nm and standard light output of 200mW (CW). LDM-0808-200m-*0 adopts a TO-56 package, while installes beam shaping ball lens. The shaped laser beam provides smaller divergency for both fast axis and slow axis. The colimated laser beam is more convenient for customers to design their own optical system. Featured and benefited a high reliable operating and a narrow emitting width 20µm, LDM-0808-200m-70 allows to operate with a high quality laser beam, It's ideal for pumping Nd:YAG and illumination applications.


LDM-0808-200m-*0 belongs to HTOE's LDM series, which based on Quantum-well epitaxy and ridge waveguide structure design. HTOE packaged single emitters provide excellent reliability and performance. Center wavelength includes 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 9xxnm and 1064 nm. Package designs include TO mounts, CoS mounts, C-mounts and F-mounts. Provide beam shaping services like fast-axis compression according to customer demands.


Features

  • 808nm center wavelength
  • 200mW output power
  • Standard TO-56 package
  • With beam shaping ball lens
  • High electro-optical effiency
  • High reliablity

Applications

  • Laser Pumping
  • Medical
  • Illumination

Parameters(20℃)

TOØ56 Packaged Single Emitter
ItemParameterUnitLDM-0808-200m-*0
Min.TypicalMax.
Optical ParameterOutput powermW-200-
Lasing Wavelengthnm804808812
Spectral Widthnm-1.02.0
Emitting Area widthµm-20-
Temperature Coefficientnm/℃-0.30-
Fast Axis Divergencedeg-
Slow Axis Divergencedeg-
Electrical ParameterSlope EfficiencyW/A1.0--
Threshold CurrentA-0.030.06
Operating CurrentA-0.200.22
Operating VoltageV-1.802.00
OthersPackage-TOØ56
Operating Temperature10 ~ 50
Storage Temperature-10 ~ 60

Package Information


TOØ56 Package


Function Curve

P-I-V Curve Spectral Curve


Notice


1. Item model notice: LDM (Item model), **** (Center wavelength), **** (Output power), ** (Heat sink structure and item width).

2. Data in the sheet are all based on TOØ56 package testing.

3. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.


ESD Cautions


The primary cause of diode failure is unexpected electrostatic discharge. To help prevent device failures, be sure to handle devices with extreme care. Users should always wear an ESD wrist strap, ground all applicable work surfaces and follow anti-static techniques when handling diode lasers.


Operating Considerations


Operating the diode laser outside of its maximum ratings may present a safety hazard or cause a device failure. Additionally, excessive drive current or switching transients can damage CW diode lasers. DO NOT exceed the maximum peak optical power. Before turning the power supply on, connect the component to the power supply and ensure the output voltage value is zero. After the component has been successfully connected, increase the current slowly and monitor both the output power and drive current. Device degradation accelerates with increased temperature; therefore, careful attention to minimizing the case temperature is advised. A proper heat-sink for the diode laser on a thermal radiator will greatly enhance laser life.


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