6H Or 4H SiC Substrate, N Type Or Semi-Insulating -Powerway Wafer

Product Description

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,we are devoted to continuously improve the quality of currently substrates and develop large size substrates.

Here shows detail specification:

SILICON CARBIDE MATERIAL PROPERTIES

6H N-TYPE SiC, 2″(50.8mm)WAFER SPECIFICATION

4H SEMI-INSULATING SiC, 2″(50.8mm)WAFER SPECIFICATION

(High-Purity Semi-Insulating(HPSI) SiC substrate is available)

4H N-type or Semi-insulating SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm

4H N-type or Semi-insulating SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION: Thickness:330μm/430μm

4H N-TYPE SiC, 2″(50.8mm)WAFER SPECIFICATION

4H N-TYPE SiC, 3″(76.2mm)WAFER SPECIFICATION

4H SEMI-INSULATING SiC, 3″(76.2mm)WAFER SPECIFICATION

(High Purity Semi-Insulating(HPSI) SiC substrate is available)

4H N-TYPE SiC, 4″(100mm)WAFER SPECIFICATION

4H N-type or semi-insulating SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION: Thickness:330μm/430μm

4H N-type or semi-insulating SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION:Thickness:330μm/430μm

a-plane SiC Wafer, size: 40mm*10mm,30mm*10mm,20mm*10mm,10mm*10mm,specs below:

6H/4H N type Thickness:330μm/430μm or custom

6H/4H Semi-insulating Thickness:330μm/430μm or custom

4H SiC,SEMI-INSULATING, 4″(100mm)WAFER SPECIFICATION

(High-Purity Semi-Insulating(HPSI) SiC substrate is available)

4H SiC,N-TYPE , 6″(150mm)WAFER SPECIFICATION

Please see below sub-catalogue:

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.