P Type , VGF InP Wafer With CMP Polished , 2”, Prime Grade , Epi Ready

P Type , VGF InP Wafer With CMP Polished , 2”, Prime Grade , Epi Ready

PAM-XIAMEN provides single crystal InP(Indium phosphide) wafer for micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 6 inch. Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP wafer is an important semiconductor material which have superior electrical and thermal properties, InP wafer has higher electron mobility, higher frequency, low power consumption , higher thermal conductivity and low noise performance . PAM-XIAMEN can provide epi ready grade InP wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

P Type, InP Wafer, 2”, Prime Grade, Epi Ready

Indium Phosphide Facts

• Indium phosphide (InP) includes phosphorus and indium and is a binary semiconductor.
• It has a zincblende crystal structure similar to GaAs and almost all the III-V semiconductors.
• It has superior electron velocity due to which it is used in high-frequency and high-power electronics.
• It has a direct bandgap, unlike many semiconductors.
• Indium phosphide is also used as a substrate for optoelectronic devices.
• Molecular weight: 145.792 g/mol
• Melting point: 1062 °C (1943.6 °F)
• It can be used for virtually any electronic device that requires high speed or high power.
• It has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.
• InP is the most important material for the generation of laser signals and the detection and conversion of those signals back to electronic form.

	Field dependences of the electron drift velocity in InP, 300 K. Solid curve are theoretical calculation. Dashed and dotted curve are measured data. (Maloney and Frey [1977]) and (Gonzalez Sanchez et al. [1992]).
	The field dependences of the electron drift velocity for high electric fields. T(K): 1. 95; 2. 300; 3. 400. (Windhorn et al. [1983]).
	Field dependences of the electron drift velocity at different temperatures. Curve 1 -77 K (Gonzalez Sanchez et al. [1992]). Curve 2 - 300 K, Curve 3 - 500 K (Fawcett and Hill [1975]).
	Electron temperature versus electric field for 77 K and 300 K. (Maloney and Frey [1977])
	Fraction of electrons in L and X valleys nL/no and nX/no as a function of electric field, 300 K. (Borodovskii and Osadchii [1987]).
	Frequency dependence of the efficiency η at first (solid line) and at the second (dashed line) harmonic in LSA mode. Monte Carlo simulation. F = Fo + F1·sin(2π·ft) + F2·[sin(4π·ft)+3π/2], Fo=F1=35 kV cm-1, F2=10.5 kV cm-1 (Borodovskii and Osadchii [1987]).
	Longitudinal (D || F) and transverse (D ⊥ F) electron diffusion coefficients at 300 K. Ensemble Monte Carlo simulation. (Aishima and Fukushima [1983]).
	Longitudinal (D || F) and transverse (D ⊥ F) electron diffusion coefficients at 77K. Ensemble Monte Carlo simulation. (Aishima and Fukushima [1983]).

Application in LiDAR systems for the automotive sector and industry 4.0

Widely discussed in the LiDAR arena is the wavelength of the signal. While some players have opted for 830-to-940-nm wavelengths to take advantage of available optical components, companies (including Blackmore, Neptec, Aeye, and Luminar) are increasingly turning to longer wavelengths in the also-well-served 1550-nm wavelength band, as those wavelengths allow laser powers roughly 100 times higher to be employed without compromising public safety. Lasers with emission wavelengths longer than ≈ 1.4 μm are often called “eye-safe” because light in that wavelength range is strongly absorbed in the eye's cornea, lens and vitreous body and therefore cannot damage the sensitive retina).

• LiDAR-based sensor technology can provide a high level of object identification and classification with three-dimensional (3D) imaging techniques.

• The automotive industry will adopt a chip-based, low cost solid state LiDAR sensor technology instead of large, expensive, mechanical LiDAR systems in the future.

• For the most advanced chip-based LiDAR systems, InP will play an important role and will enable autonomous driving. (Report: Blistering Growth for Automotive Lidar, Stewart Wills). The longer eye safe wavelength is also more appropriate dealing with real world conditions like dust, fog and rain.

Are You Looking for an InP substrate?

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InP wafers, send us enquiry today to learn more about how we can work with you to get you the InP wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.