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G8370-81 InGaAs PIN Photodiode Low PDL Polarization Dependence Loss

Categories Infrared Photoelectric Sensor
Brand Name: Hamamatsu
Model Number: G8370-81
Place of Origin: Japan
MOQ: 1
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 2000pcs/Month
Delivery Time: 3-5work days
Packaging Details: In a box
Price: Negotiable
photosensitive area is: φ1.0mm
Number of pixels: 1
Encapsulated: Metal
encapsulation type is: TO-18
Cooling mode: Non - cooled
spectral response range is: 0.9 to 1.7 μm
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G8370-81 InGaAs PIN Photodiode Low PDL Polarization Dependence Loss

Product Description:

G8370-81 InGaAs PIN Photodiode Low PDL Polarization Dependence Loss


Features:

Low PDL(polarization dependent loss)

InGaAs PIN photodiode G8370-81 has low PDL (polarization dependent loss), large shitter resistance and very low noise at 1.55μm.

Product features

Low PDL(polarization dependent loss)

● Low noise, low dark current

● Large photographic area

● Photosensitive area: φ1 mm

Noise equivalent power (typical value) 2×10-14 W/ hz1/2

Measurement conditions TYP.TA =25 ℃, Photosensitivity: λ=λp, Dark Current: VR=1 V, Cutoff frequency: VR=1 V, RL=50 ω, -3 dB, Terminal capacitance: VR=1 V, F =1 MHz, unless otherwise noted


Specifications:

peak sensitivity wavelength (typical value) was1.55 μm
Sensitivity (typical value)1.1 A/W
Dark current (maximum)5 nA
Cutoff frequency (typical value)35 MHz
Junction capacitance (typical value)90 pF
Noise equivalent power (typical value)2×10-14 W/ hz1/2

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