Sign In | Join Free | My ecer.jp
ecer.jp
Products
Search by Category
Home > Electronics Stocks >

YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode

Categories Infrared Photoelectric Sensor
Brand Name: HAMAMATSU
Model Number: S16838-02MS
Place of Origin: Japan
MOQ: 1
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 1500
Delivery Time: 5-8 days
Packaging Details: Tube installation
Refrigeration: Non-cooled type
Spectral response range: 320 to 1100 nm
Maximum sensitivity wavelength: (Typical value) 960 nm
Photosensitive sensitivity (typical value): 0.58 A/W
Dark current (maximum value): 10 pA
Rise time (typical value): 2.5 μs
  • Haven't found right suppliers
  • Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
  • And this service is free of charge.
  • we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!
Submit Buying Request
  • Product Details
  • Company Profile

YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode

S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter


Specification Description
Low dark current, pre-molded packaging
These photodiodes provide low dark current for high-precision measurement from low illumination to high illumination. Pre-molded packaging is designed to block stray light from the sides and back of the package to the light-receiving surface.


Characteristics
-S16838-01MS: Applicable to the visible light band
-S16838 /S16840-02MS: Applicable to the visible light to infrared band
-S16765-01MS: Applicable to the visible light to near-infrared band

Detailed parameters
The illuminated surface is 2.8 × 2.4 mm
Encapsulation plastic
Encapsulation category
Refrigerated non-cooled type
The spectral response range is 320 to 1100 nm
The maximum sensitivity wavelength (typical value) is 960 nm
Photosensitive sensitivity (typical value) : 0.58 A/W
Dark current (maximum value) 10 pA
Rise time (typical value) 2.5 μs
Junction capacitance (typical value) : 700 pF
Measurement conditions: Ta = 25°C, typical values, photosensitive sensitivity: λ = λp, dark current: VR = 1 V, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise specified


Specifications:

spectral response range320 to 1100 nm
Illuminated surface2.8 × 2.4 mm
Photosensitive sensitivity0.58 A/W
Dark current (maximum value)10 pA


Cheap YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode for sale
Send your message to this supplier
 
*From:
*To: ShenzhenYijiajie Electronic Co., Ltd.
*Subject:
*Message:
Characters Remaining: (0/3000)
 
Inquiry Cart 0