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S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance

Categories Infrared Photoelectric Sensor
Brand Name: Hamamatsu
Model Number: S1337-1010BQ
Place of Origin: Japan
MOQ: 1
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 1000pcs/Month
Delivery Time: 3-5work days
Packaging Details: Standard Packing
Price: Negotiable
photographic area is: 10 × 10 mm
Number of pixels: 1
Refrigeration and: Non - cooled
Encapsulated: Ceramic
Reverse voltage (Max.): 5 V
spectral response range is190 to 1100: 190 to 1100 nm
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S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance

Product Description:

S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance


Features:

Suitable for precise photometric determination from ultraviolet to red band

Product features

High UV sensitivity: QE = 75% (λ=200 nm)

Low capacitance

Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V, f=10 kHz


Specifications:

Peak sensitivity wavelength (typical value)960 nm
Sensitivity (typical value)0.5 A/W
Dark current (maximum)200 pA
Rise time (typical value)3 mu s
Junction capacitance (typical value)

1100 pF



1337-1010bq.PNG


Cheap S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance for sale
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