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RoHS Approved Schottky Diode Guard Ring For Overvoltage Protection

Categories Wireless Charging Coil
Brand Name: Uchi
Model Number: MBR20150
Certification: CE / RoHS / ISO9001 / UL
Place of Origin: Dongguan China
MOQ: Negotiation
Price: Negotiation
Payment Terms: T/T
Supply Ability: 2000000 per month
Delivery Time: Negotiation
Packaging Details: Export package / Negotiation
Type: Schottky Diode
Features: RoHS product
Package Type: Through Hole
Max. Forward Current: 30A, 30A
Max. Forward Voltage: 0.9V, 0.9V
Applications: High frequency switch Power supply
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RoHS Approved Schottky Diode Guard Ring For Overvoltage Protection

Guard Ring For Overvoltage Protection Schottky Diode With RoHS​

Advantage

SBD has the advantages of high switching frequency and low forward voltage, but its reverse breakdown voltage is relatively low, mostly not higher than 60V, and the highest is only about 100V, which limits its application range. Such as freewheeling diodes of power switching devices in switching power supply (SMPS) and power factor correction (PFC) circuits, high-frequency rectifier diodes above 100V for transformer secondary, high-speed diodes of 600V~1.2kV in RCD snubber circuits, and For 600V diodes used in PFC step-up, only fast recovery epitaxial diodes (FRED) and ultra-fast recovery diodes (UFRD) are used. The reverse recovery time Trr of UFRD is also more than 20ns, which cannot meet the needs of 1MHz~3MHz SMPS in fields such as space stations. Even for an SMPS with hard switching at 100kHz, due to the large conduction loss and switching loss of UFRD, the case temperature is high, and a large heat sink is required, which increases the size and weight of the SMPS, which does not meet the miniaturization and thinning requirements. development trend. Therefore, the development of high-voltage SBDs above 100V has always been a research topic and a focus of attention. In recent years, SBD has made breakthrough progress, 150V and 200V high-voltage SBDs have been listed, and the SBD of more than 1kV made of new materials has also been successfully developed, thus injecting new vitality and vitality into its application.

Features

1. Common cathode structure
2. Low power loss, high efficiency
3. High Operating Junction Temperature
4. Guard ring for overvoltage protection,High reliability
5. RoHS product

Applications

1. High frequency switch Power supply

2. Free wheeling diodes, Polarity protection applications

MAIN CHARACTERISTICS

IF(AV)

10(2×5)A

VF(max)

0.7V (@Tj=125°C)

Tj

175 °C

VRRM

100 V

PRODUCT MESSAGE

Model

Marking

Package

MBR10100

MBR10100

TO-220C

MBRF10100

MBRF10100

TO-220F

MBR10100S

MBR10100S

TO-263

MBR10100R

MBR10100R

TO-252

MBR10100V

MBR10100V

TO-251

MBR10100C

MBR10100C

TO-220

ABSOLUTE RATINGS (Tc=25°C)

Parameter


Symbol


Value


Unit

Repetitive peak reverse voltage

VRRM

100

V

Maximum DC blocking voltage

VDC

100

V

Average forward current

TC=150°C (TO-220/263/252 )TC=125°C(TO-220F)


per device


per diode

IF(AV)

10 5

A


Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod)

IFSM

120

A

Maximum junction temperature

Tj

175

°C

Storage temperature range

TSTG

-40~+150

°C


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