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Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply

Categories Wireless Charging Coil
Brand Name: Uchi
Model Number: Schottky diodes
Certification: CE / RoHS / ISO9001 / UL
Place of Origin: Dongguan China
MOQ: Negotiation
Price: Negotiation
Payment Terms: T/T
Supply Ability: 2000000 per month
Delivery Time: Negotiation
Packaging Details: Export package / Negotiation
Type: Schottky Diode
Features: Common cathode structure
Material: Silicon
Max. Forward Current: 30A, 30A
Max. Forward Voltage: 0.9V, 0.9V
Max. Reverse Voltage: 200V
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Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply

Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply​

MBR10100.pdf


The Schottky diode is named after its inventor, Dr. Schottky (Schottky), and SBD is the abbreviation of Schottky Barrier Diode (Schottky Barrier Diode, abbreviated as SBD). SBD is not made by the principle of contacting P-type semiconductor and N-type semiconductor to form PN junction, but by using the principle of metal-semiconductor junction formed by contacting metal and semiconductor. Therefore, SBD is also called metal-semiconductor (contact) diode or surface barrier diode, which is a kind of hot carrier diode.


Features

1. Common cathode structure
2. Low power loss, high efficiency
3. High Operating Junction Temperature
4. Guard ring for overvoltage protection,High reliability
5. RoHS product

Applications

1. High frequency switch Power supply

2. Free wheeling diodes, Polarity protection applications

MAIN CHARACTERISTICS

IF(AV)

10(2×5)A

VF(max)

0.7V (@Tj=125°C)

Tj

175 °C

VRRM

100 V

PRODUCT MESSAGE

Model

Marking

Package

MBR10100

MBR10100

TO-220C

MBRF10100

MBRF10100

TO-220F

MBR10100S

MBR10100S

TO-263

MBR10100R

MBR10100R

TO-252

MBR10100V

MBR10100V

TO-251

MBR10100C

MBR10100C

TO-220

ABSOLUTE RATINGS (Tc=25°C)

Parameter


Symbol


Value


Unit

Repetitive peak reverse voltage

VRRM

100

V

Maximum DC blocking voltage

VDC

100

V

Average forward current

TC=150°C (TO-220/263/252 )TC=125°C(TO-220F)


per device


per diode

IF(AV)

10 5

A


Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod)

IFSM

120

A

Maximum junction temperature

Tj

175

°C

Storage temperature range

TSTG

-40~+150

°C


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