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| Categories | SiC Substrate |
|---|---|
| Brand Name: | zmkj |
| Model Number: | 6h-n, 4h-semi |
| Place of Origin: | china |
| MOQ: | 1pcs |
| Price: | by required |
| Supply Ability: | 100pcs/months |
| Delivery Time: | 10-20days |
| Packaging Details: | Packaged in a class 100 clean room environment, in cassettes of single wafer containers |
| material: | sic crystal |
| industry: | semiconductor wafer |
| application: | semiconductor, Led, device, power electronics,5G |
| color: | blue, green, white |
| type: | 4H,6H, DOPED, no doped, high purity |
| Company Info. |
| SHANGHAI FAMOUS TRADE CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
10 Mm X 10 Mm 6H Semi-Insulating Type SiC Substrate Research Grade SiC Crystal Substrate
4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates, Silicon Carbide substrates for a semiconductor device, 4h-semi 4h-N customized square shape sic wafers, 10 mm x 10 mm 6H Semi-Insulating Type SiC, Research Grade, SiC Crystal Substrate
Application areas
1 high frequency and high power electronic devices Schottky diodes,
JFET, BJT, PiN, diodes, IGBT, MOSFET
2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED
Advantagement
• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap
Substrates size of standard
4 inch diameter Silicon Carbide (SiC) Substrate Specification | |||||||||
| Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade | |||||
| Diameter | 100.0 mm±0.5 mm | ||||||||
| Thickness | 350 μm±25μm (200-500um thickness also is ok) | ||||||||
| Wafer Orientation | Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI | ||||||||
| Micropipe Density | ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ≤50 cm-2 | |||||
| Resistivity | 4H-N | 0.015~0.028 Ω•cm | |||||||
| 6H-N | 0.02~0.1 Ω•cm | ||||||||
| 4/6H-SI | ≥1E5 Ω·cm | ||||||||
| Primary Flat and length | {10-10}±5.0° ,32.5 mm±2.0 mm | ||||||||
| Secondary Flat Length | 18.0mm±2.0 mm | ||||||||
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | ||||||||
| Edge exclusion | 3 mm | ||||||||
| TTV/Bow /Warp | ≤15μm /≤25μm /≤40μm | ||||||||
| Roughness | Polish Ra≤1 nm ,CMP Ra≤0.5 nm | ||||||||
| Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm | ||||||
| Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% | ||||||
| Polytype Areas by high intensity light | None | Cumulative area ≤2% | Cumulative area ≤5% | ||||||
| Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | ||||||
| edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | ||||||
| Contamination by high intensity light | None | ||||||||
Sic wafer ＆ ingots 2-6inch and other customized size also can be provided.
Pictures of delivery Products before
RFQ
A:semiconductor wafers and Optical lens,mirrors,windows,filters,prisms
A: In general delivery time is about one month for custom produced optics.except stock ones or some special optics.
A: We can provide free samples if we have stock optics as your request,while custom produced samples are not free.
MOQ is 10pcs for most of wafer or lens , while MOQ could be only one piece if you need a element in big dimention.
T/T,L/C,VISA,Paypal,Alipay or Negotiation.
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4H-N Silicon Carbide SiC Substrate 2inch 3inch 4inch 6inch 8inch Prime Grade Dummy Grade
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Undoped transparent silicon carbide sic crystal Optical Lens with hardness 9.2
2 Inch 6H - Semi Silicon Carbide Wafer Low Power Consumption For Detector
2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device
dummy production Research Grade Silicon Carbide high purity 4h-semi un-doped transparent sic Wafer
Customized Size Square Sic Chip Low Lattice Mismatch With High Thermal
3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics
Semi - Insulating Silicon Carbide Substrate , Sic Wafer 4H High Purity
4H-SEMI Polished Sic Wafer lens 2INCH 3INCH 4INCH 9.0 Hardness For Device Material
