2 Inch 6H - Semi Silicon Carbide Wafer Low Power Consumption For Detector

2inch 6H-Semi sic wafer ,customized sic substrates , 2inch 6H-N sic wafers , sic crystal ingots ,Silicon Carbide Wafer

This 2-inch 6H semi-insulating silicon carbide (SiC) wafer is designed for applications requiring low power consumption, particularly in detectors. Silicon carbide is known for its exceptional high-temperature stability, high breakdown voltage, and excellent thermal conductivity, making it an ideal material for high-performance electronic devices and sensors. The wafer's superior electrical insulation properties and low power consumption significantly enhance detector efficiency and lifespan. As a key component for achieving low-power, high-performance detection technology, this SiC wafer is well-suited for various demanding applications.

Application areas

• 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
• diodes, IGBT, MOSFET
• 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

SILICON CARBIDE MATERIAL PROPERTIES

Standard spec.

ZMKJ can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .

Packing and Delivery

>Packaging – Logistcs
we concerns each details of the package , cleaning, anti-static , shock treatment .

According to the quantity and shape of the product , we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassette in 100 grade cleaning room.