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| Categories | Mosfet Power Transistor |
|---|---|
| Brand Name: | Hua Xuan Yang |
| Model Number: | 5N20DY TO-252 |
| Certification: | RoHS、SGS |
| Place of Origin: | ShenZhen China |
| MOQ: | negotiation |
| Price: | Negotiated |
| Payment Terms: | L/C T/T Western Union |
| Supply Ability: | 18,000,000PCS / Per Day |
| Delivery Time: | 1 - 2 Weeks |
| Packaging Details: | Boxed |
| Product name: | Mosfet Power Transistor |
| Type: | N Channel |
| Drain-Source Voltage: | 200 V |
| Gate-Source Voltage: | ±20V |
| Applications: | LED Drive |
N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive
Mosfet Power Transistor Description
The AP50N20D uses advanced trench
technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other
Mosfet Power Transistor General Features
V DS =200V,I D =5A
R DS(ON) <520mΩ @ V GS =4.5V
Mosfet Power Transistor Application
Load switching
Hard switched and high frequency circuits Uninterruptible power supply
Package Marking and Ordering Information
| Product ID | Pack | Marking | Qty(PCS) |
| 5N20D | TO-252 | 5N20D | 3000 |
| 5N20Y | TO-251 | 5N20Y | 4000 |
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | 200 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Drain Current-Continuous | ID | 5 | A |
| Drain Current-Pulsed (Note 1) | IDM | 20 | A |
| Maximum Power Dissipation | PD | 30 | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | ℃ |
Thermal Characteristic
| Thermal Resistance,Junction-to-Ambient (Note 2) | RθJA | 4.17 | ℃/W |
Electrical Characteristics (TA=25℃unless otherwise noted)
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V ID=250μA | 200 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=200V,VGS=0V | - | - | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 1.2 | 1.7 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=2A | - | 520 | 580 | mΩ |
| Forward Transconductance | gFS | VDS=15V,ID=2A | - | 8 | - | S |
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, F=1.0MHz | - | 580 | - | PF |
| Output Capacitance | Coss | - | 90 | - | PF | |
| Reverse Transfer Capacitance | Crss | - | 3 | - | PF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=100V, RL=15Ω VGS=10V,RG=2.5Ω | - | 10 | - | nS |
| Turn-on Rise Time | tr | - | 12 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 15 | - | nS | |
| Turn-Off Fall Time | tf | - | 15 | - | nS | |
| Total Gate Charge | Qg | VDS=100V,ID=2A, VGS=10V | - | 12 | nC | |
| Gate-Source Charge | Qgs | - | 2.5 | - | nC | |
| Gate-Drain Charge | Qgd | - | 3.8 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V,IS=2A | - | - | 1.2 | V |
| Diode Forward Current (Note 2) | IS | - | - | 5 | A | |
Notes:
Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 0.483 TYP. | 0.190 TYP. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 TYP. | 0.114 TYP. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 TYP. | 0.063 TYP. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| Φ | 1.100 | 1.300 | 0.043 | 0.051 |
| θ | 0° | 8° | 0° | 8° |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 TYP. | 0.211 TYP. | ||
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