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S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

Categories Infrared Photoelectric Sensor
Brand Name: Hamamatsu
Model Number: S1226-8BQ
Place of Origin: Japan
MOQ: 1
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 3000/pcs/pre
Delivery Time: 3-5work days
Packaging Details: In a box
Price: Negotiable
photographic area is: 5.8 × 5.8mm
Number of pixels: 1
Refrigeration and: Non - cooled
Encapsulated: Metal
encapsulation type is: TO-8
Reverse voltage (max): 5V
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S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

Product Description:

S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity


Features:

● High UV sensitivity: QE = 75% (λ=200 nm)

● Suppress NIR sensitivity

● Low dark current

● High reliability

Dark current (maximum) 20 pA

Rise time (typical value). 2 mu s

Junction capacitance (typical value) 1200 pF

Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz


Specifications:

Reverse voltage (Max.)5V
spectral response range is190 to 1000 nm
peak sensitivity wavelength (typical value) was720 nm
Typeinfrared photoelectricity


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