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Categories | Infrared Photoelectric Sensor |
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Brand Name: | Hamamatsu |
Model Number: | S1226-8BQ |
Place of Origin: | Japan |
MOQ: | 1 |
Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability: | 3000/pcs/pre |
Delivery Time: | 3-5work days |
Packaging Details: | In a box |
Price: | Negotiable |
photographic area is: | 5.8 × 5.8mm |
Number of pixels: | 1 |
Refrigeration and: | Non - cooled |
Encapsulated: | Metal |
encapsulation type is: | TO-8 |
Reverse voltage (max): | 5V |
Company Info. |
ShenzhenYijiajie Electronic Co., Ltd. |
Verified Supplier |
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Product List |
Product Description:
S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity
Features:
● High UV sensitivity: QE = 75% (λ=200 nm)
● Suppress NIR sensitivity
● Low dark current
● High reliability
Dark current (maximum) 20 pA
Rise time (typical value). 2 mu s
Junction capacitance (typical value) 1200 pF
Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
Reverse voltage (Max.) | 5V |
spectral response range is | 190 to 1000 nm |
peak sensitivity wavelength (typical value) was | 720 nm |
Type | infrared photoelectricity |
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