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Categories | Infrared Photoelectric Sensor |
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Brand Name: | Hamamatsu |
Model Number: | S2387-66R |
Place of Origin: | Japan |
MOQ: | 1 |
Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability: | 1000pcs/Month |
Delivery Time: | 3-5work days |
Packaging Details: | In box |
Price: | Negotiable |
pulse: | 340-1100 |
Gap LED 560nm: | 0.33 |
typ ua: | 50 |
times: | 1.12 |
Company Info. |
ShenzhenYijiajie Electronic Co., Ltd. |
Verified Supplier |
View Contact Details |
Product List |
Product Description:
S2387-66R Silicon Photodiode For Universal Photometry From Visible To Infrared Low Dark Current
Features:
Large area high speed silicon PIN photodiode
The S2387-66R has a large photosensitive area, but has excellent frequency response at 40 MHz. This diode is suitable for FSO(free space Optics) and high speed pulsed light detection.
Product features
Photosensitive area: φ5.0mm
Cut-off frequency: 40 MHz (VR=24 V)
High reliability: TO-8 metal package
Measurement conditions Ta=25 ℃, Typ., Photosensitivity: λ=780 nm, Dark current: VR=24 V, Cutoff frequency: VR=24 V, Terminal capacitance: VR=24 V, F =1 MHz, λ=λp, Noise equivalent power: VR=24 V, λ=λp, unless otherwise noted
Specifications:
Peak sensitivity wavelength (typical value) | 920 nm |
Sensitivity (typical value) | 0.58 A/W |
Dark current (maximum) | 4300pA |
Rise time (typical value) | 18 mu s |
Junction capacitance (typical value) | 40 pF |
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