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S2387-66R Silicon Photodiode For Universal Photometry From Visible To Infrared Low Dark Current

Categories Infrared Photoelectric Sensor
Brand Name: Hamamatsu
Model Number: S2387-66R
Place of Origin: Japan
MOQ: 1
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 1000pcs/Month
Delivery Time: 3-5work days
Packaging Details: In box
Price: Negotiable
pulse: 340-1100
Gap LED 560nm: 0.33
typ ua: 50
times: 1.12
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S2387-66R Silicon Photodiode For Universal Photometry From Visible To Infrared Low Dark Current

Product Description:

S2387-66R Silicon Photodiode For Universal Photometry From Visible To Infrared Low Dark Current


Features:

Large area high speed silicon PIN photodiode

The S2387-66R has a large photosensitive area, but has excellent frequency response at 40 MHz. This diode is suitable for FSO(free space Optics) and high speed pulsed light detection.

Product features

Photosensitive area: φ5.0mm

Cut-off frequency: 40 MHz (VR=24 V)

High reliability: TO-8 metal package

Measurement conditions Ta=25 ℃, Typ., Photosensitivity: λ=780 nm, Dark current: VR=24 V, Cutoff frequency: VR=24 V, Terminal capacitance: VR=24 V, F =1 MHz, λ=λp, Noise equivalent power: VR=24 V, λ=λp, unless otherwise noted


Specifications:

Peak sensitivity wavelength (typical value)920 nm
Sensitivity (typical value)0.58 A/W
Dark current (maximum)4300pA
Rise time (typical value)18 mu s
Junction capacitance (typical value)

40 pF



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