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FGH4L40T120LQD IGBT Transistor Module 1200V 80A 306W Through Hole TO-247-4L

Categories IGBT Transistor Module
Brand Name: onsemi
Model Number: FGH4L40T120LQD
MOQ: 50pcs
Price: Negotiable
Supply Ability: 1000000pcs
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 160 A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Power - Max: 306 W
Switching Energy: 1.04mJ (on), 1.35mJ (off)
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FGH4L40T120LQD IGBT Transistor Module 1200V 80A 306W Through Hole TO-247-4L

FGH4L40T120LQD IGBT Trench Field Stop 1200 V 80 A 306 W Through Hole TO-247-4L

onsemi FGH4L40T120LQD IGBT

onsemi FGH4L40T120LQD IGBT is a robust Ultra Field Stop Trench construction that provides superior performance in demanding switching applications. This IGBT is incorporated into the device which is a soft and fast co-packaged free-wheeling diode with a low forward voltage. The FGH4L40T120LQD IGBT offers both low on-state voltage and minimal switching loss. This IGBT operates at 175°C maximum junction temperature. The FGH4L40T120LQD IGBT operates at 1200V, 40A, and is built in a TO247 4L package. Typical applications include solar inverters and UPS, industrial switching, and welding.

FEATURES

  • Extremely efficient trench with field stop technology
  • 175°C maximum junction temperature (TJ)
  • Fast and soft reverse recovery diode
  • Optimized for Low VCE(Sat)
  • 1200V maximum Collector-Emitter Voltage (VCE)

APPLICATIONS

  • Solar inverter and UPS
  • Industrial switching
  • Welding

PIN CONNECTION

onsemi FGH4L40T120LQD IGBT

GATE CHARGE CHARACTERISTICS

Performance Graph - onsemi FGH4L40T120LQD IGBT
Cheap FGH4L40T120LQD IGBT Transistor Module 1200V 80A 306W Through Hole TO-247-4L for sale
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