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SVF7N65F 650V N Channel MOSFET IC 1.4 Ohm 30MHz Through Hole

Categories Electronic IC Chip
Model Number: SVF7N65F
Place of Origin: Guangdong, China
Brand Name: Original
Packaging Details: Standard carton
MOQ: 1
Price: Negotiable
Type: MOSFET
Package Type: Throught Hole
Power - Max: 46W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO220F
Drain to Source Voltage (Vdss): 650V
Rds On (Max) @ Id, Vgs: 1.4 Ohm
Vgs (Max): 30 V
Current Drain (Id) - Max: 7A
Stock: In Stock
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SVF7N65F 650V N Channel MOSFET IC 1.4 Ohm 30MHz Through Hole

Introducing the High-Power SVF7N65F SI7N65F Transistor

Unleash the True Potential of Your Power Supply with Enhanced Technology


Transform your power supply with the exceptional SVF7N65F SI7N65F transistor, designed to bring you unparalleled benefits. Manufactured using state-of-the-art VAMOS process technology, this transistor comes with a strip-shaped cell design that offers superior switching performance, low on-resistance, and incredible avalanche breakdown tolerance.


Featuring a 7A, 650V, RDS(on) and low gate charge, this transistor boasts low reverse transfer capacitance, fast switching speed, and improved dv/dt capability. Ideal for use in AC-DC switching power supply, DC-DC power converter, and high-voltage H-bridge PWM motor drive, this product truly delivers. Upgrade your power supply with the SVF7N65F SI7N65F transistor today and experience the ultimate performance.



Type Designator

SVF7N65F

Type of Transistor

MOSFET

Type of Control Channel

N -Channel

Maximum Power Dissipation (Pd)

46 W

Maximum Drain-Source Voltage |Vds|

650 V

Maximum Gate-Source Voltage |Vgs|

30 V

Maximum Drain Current |Id|

7 A

Maximum Junction Temperature (Tj)

150 °C

Rise Time (tr)

48 nS

Drain-Source Capacitance (Cd)

98.6 pF

Maximum Drain-Source On-State Resistance (Rds)

1.4 Ohm

Package

TO220F


Cheap SVF7N65F 650V N Channel MOSFET IC 1.4 Ohm 30MHz Through Hole for sale
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