Sign In | Join Free | My ecer.jp |
|
Categories | Electronic IC Chip |
---|---|
Model Number: | SVF7N65F |
Place of Origin: | Guangdong, China |
Brand Name: | Original |
Packaging Details: | Standard carton |
MOQ: | 1 |
Price: | Negotiable |
Type: | MOSFET |
Package Type: | Throught Hole |
Power - Max: | 46W |
Frequency - Transition: | 30MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO220F |
Drain to Source Voltage (Vdss): | 650V |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm |
Vgs (Max): | 30 V |
Current Drain (Id) - Max: | 7A |
Stock: | In Stock |
Transform your power supply with the exceptional SVF7N65F SI7N65F transistor, designed to bring you unparalleled benefits. Manufactured using state-of-the-art VAMOS process technology, this transistor comes with a strip-shaped cell design that offers superior switching performance, low on-resistance, and incredible avalanche breakdown tolerance.
Featuring a 7A, 650V, RDS(on) and low gate charge, this transistor boasts low reverse transfer capacitance, fast switching speed, and improved dv/dt capability. Ideal for use in AC-DC switching power supply, DC-DC power converter, and high-voltage H-bridge PWM motor drive, this product truly delivers. Upgrade your power supply with the SVF7N65F SI7N65F transistor today and experience the ultimate performance.
Type Designator | SVF7N65F |
Type of Transistor | MOSFET |
Type of Control Channel | N -Channel |
Maximum Power Dissipation (Pd) | 46 W |
Maximum Drain-Source Voltage |Vds| | 650 V |
Maximum Gate-Source Voltage |Vgs| | 30 V |
Maximum Drain Current |Id| | 7 A |
Maximum Junction Temperature (Tj) | 150 °C |
Rise Time (tr) | 48 nS |
Drain-Source Capacitance (Cd) | 98.6 pF |
Maximum Drain-Source On-State Resistance (Rds) | 1.4 Ohm |
Package | TO220F |
![]() |