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Categories | Flash Memory IC Chip |
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Brand Name: | Original |
Model Number: | MMBT5551 |
MOQ: | 10 pcs |
Price: | Bargain |
Payment Terms: | T/T |
Supply Ability: | 1kk/months |
Delivery Time: | 1-7 days |
Packaging Details: | Carton |
Description: | Bipolar Transistors - BJT SOT23,NPN,0.6A,160V,HighVolt |
Type: | Bipolar Transistors - BJT |
Name: | Transistors |
Part number: | MMBT5551 |
Package: | SOT-23-3 |
Small order: | Welcome |
2N5551 / MMBT5551 NPN通用放大器MMBT5550LT1高压晶体管NPN硅
SOT-23 - Power Transistor and DarliCM GROUPons
Part number
BC807-T CMBTA56-T CMBT4403-T CMBTA06 CMBT3906-T CMBT3906 CMBTA56
CMBTA42-T CMBT4401-T
CMBTA42 CMBT3904 CMBT4403 CMBTA92 CMBT5551 CMBT5401 CMBT5551-T
CMBT3904-T CMBTA92-T
CMBTA06-T CMBT5401-T CMBT4401 CMBT9014 MMBT5551
Electrical Characteristics
Mfr. # | MMBT5551 |
Mounting Style | SMD/SMT |
Transistor Polarity | NPN |
Configuration | Single |
Collector- Emitter Voltage VCEO Max | 160 V |
Collector- Base Voltage VCBO | 180 V |
Emitter- Base Voltage VEBO | 6 V |
Collector-Emitter Saturation Voltage | 0.2 V |
Maximum DC Collector Current | 0.6 A |
Pd - Power Dissipation | 325 mW |
Gain Bandwidth Product fT | 300 MHz |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
DC Collector/Base Gain hfe Min | 80 at 10 mA, 5 V |
DC Current Gain hFE Max | 250 at 10 mA, 5 V |
Product Type | BJTs - Bipolar Transistors |
Electrical Characteristics (at Ta = 25°C unless otherwise specified)
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