Name: IS41LV16100B50KL IC DRAM 16MBIT PARALLEL 42SOJ ISSI Integrated Silicon Solution Inc
Brand: ISSI, Integrated Silicon Solution Inc
Price: 1 USD

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IS41LV16100B-50KL IC DRAM 16MBIT PARALLEL 42SOJ ISSI, Integrated Silicon Solution Inc

Categories	Flash Memory IC
Brand Name:	ISSI, Integrated Silicon Solution Inc
Model Number:	IS41LV16100B-50KL
MOQ:	1
Price:	Based on current price
Payment Terms:	T/T
Supply Ability:	In stock
Delivery Time:	3-5 work days
Packaging Details:	anti-static bag & cardboard box
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	DRAM - EDO
Memory Size:	16Mbit
Memory Organization:	1M x 16
Memory Interface:	Parallel
Clock Frequency:	-
Write Cycle Time - Word, Page:	-
Access Time:	25 ns
Voltage - Supply:	3V ~ 3.6V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	42-BSOJ (0.400", 10.16mm Width)
Supplier Device Package:	42-SOJ

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Company Info.

Sanhuang electronics (Hong Kong) Co., Limited

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Product Details
Company Profile

IS41LV16100B-50KL IC DRAM 16MBIT PARALLEL 42SOJ ISSI, Integrated Silicon Solution Inc

Product Details

DESCRIPTION

TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

FEATURES

• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
— Auto refresh Mode: 1,024 cycles /16 ms
— RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial Temperature Range: -40oC to +85oC
• Lead-free available

Specifications

Attribute	Attribute Value
Manufacturer	ISSI
Product Category	IC Chips
Series	-
Packaging	Tube
Package-Case	42-BSOJ (0.400", 10.16mm)
Operating-Temperature	0°C ~ 70°C (TA)
Interface	Parallel
Voltage-Supply	3 V ~ 3.6 V
Supplier-Device-Package	42-SOJ
Memory Capacity	16M (1M x 16)
Memory-Type	DRAM - EDO
Speed	50ns
Format-Memory	RAM

Descriptions

DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 25ns 42-SOJ

IS41LV16100B-50KL IC DRAM 16MBIT PARALLEL 42SOJ ISSI, Integrated Silicon Solution Inc

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